Low On-resistance Trench Lateral Power MOSFET Using 0.6 μm Smart Power Technology

In response to the requests of recent years for electronic devices that are smaller, lighter, thinner and consume less power, Fuji Electric has concentrated on the field of power supply ICs and has been developing smart power technology. To increase the packing density and reduce on-resistance of the switching devices integrated into a power IC, Fuji Electric has been producing and has verified the effectiveness of a lateral power MOSFET in which a trench is formed. This device is known as a TLPM (trench lateral power metal oxide semiconductor field effect transistor). Fuji Electric has developed a technology for integrating TLPM structures, which have a breakdown voltage of 30 V as required for power ICs used applications such as power management systems and DC-DC converters, into Fuji Electric’s existing 0.6 μm rule Bi-C/DMOS (bipolar-complementary / double diffused MOSFET) process technology. This article presents an overview of the newly developed integration technology.